Scaling of anomalous Hall effects in facing-target reactively sputtered Fe4N films.

Microwave Surface Resistance of Reactively Sputtered NbN Thin Films

The surface resistance of niobium nitride {NbN) thin films has been measured at 7. 78 and 10.14 GHz in the temperature range of 1.5 to 4.2 K. The films were reactively sputtered on sapphire substrates to a thickness of approximately 1 micron. The surface resistance was determined by measuring the quality factor (Q) of the TEo] 1 mode of a lead-plated copper cavity where the NbN served as one en...

Effect of Electrochemical Hydrogen Loading on the Photoelectrochemical Properties of Plasma-Grown In203

In two previous publications (1, 2) it has been shown that thermal oxidation of liquid indium metal droplets gives rise to hollow, hemispherical In203 structures which exhibit maximum quantum efficiencies of 290% at 310 nm. Oxide films of the same mean thickness, grown in essentially the same way except that they were exposed to the oxygen plasma during oxidation gave maximum quantum efficienci...

Decomposition and nanocrystallization in reactively sputtered amorphous Ta–Si–N thin films

The nanocrystallization process of reactively sputtered thin amorphous Ta–Si–N films is investigated by anomalous small angle x-ray scattering ~ASAXS! and x-ray diffraction ~XRD!. Changes in the microstructure in Ta40Si14N46 films, density variations in the amorphous matrix, decomposition, formation, and growth of nanocrystals after vacuum anneals at different temperatures in the range between ...

Physical Properties of Reactively Sputter-Deposited C-N Thin Films

This work aims to prepare and study amorphous carbon nitride (CNx) films. Films were deposited by reactive magnetron radiofrequency (RF) sputtering from graphite target in argon and nitrogen mixture discharge at room temperature. The ratio of the gas flow rate was varied from 0.1 to 1. Deposited films were found to be amorphous. Highest Nitrogen concentration achieved was 42 atomic percent whic...

Tailoring of structure formation and phase composition in reactively sputtered zirconium oxide films using nitrogen as an additional reactive gas